Nitrogen-induced decrease of the electron effective mass in GaAs1−xNx thin films measured by thermomagnetic transport phenomena

Thin films of GaAs1−xNx were grown on insulating GaAs substrates and subjected to temperature-dependent resistivity, Hall, Seebeck, and Nernst coefficient measurements. Density of states, effective-mass values, which are calculated from the transport data, decrease from 0.084me to 0.029me as x increases from 0 to 0.004.