材料科学
纳米棒
外延
光电子学
氮化物
铟
铟镓氮化物
光致发光
氮化铟
纳米技术
氮化镓
图层(电子)
作者
Shuo Zhang,Bingyao Liu,Fang Ren,Yue Yin,Yunyu Wang,Zhaolong Chen,Bei Jiang,Bingzhi Liu,Zhetong Liu,Jingyu Sun,Liang Meng,Jianchang Yan,Tongbo Wei,Xiaoyan Yi,Junxi Wang,Jinmin Li,Peng Gao,Zhongfan Liu,Zhiqiang Liu
出处
期刊:Small
[Wiley]
日期:2021-03-31
卷期号:17 (19)
被引量:18
标识
DOI:10.1002/smll.202100098
摘要
Abstract The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain‐modulated growth method, namely the graphene (Gr)‐nanorod (NR) enhanced quasi‐van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in‐plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small‐sized cyan light‐emitting diodes of 7 × 9 mil 2 are demonstrated. These findings provide an efficient approach for the growth of In‐rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.
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