材料科学
热电效应
四方晶系
声子
相(物质)
凝聚态物理
声子散射
热电材料
掺杂剂
间质缺损
兴奋剂
分析化学(期刊)
光电子学
热力学
物理
复合材料
热导率
有机化学
化学
色谱法
作者
Ming Wu,Hong‐Hua Cui,Songting Cai,Shiqiang Hao,Yukun Liu,Trevor P. Bailey,Yinying Zhang,Zixuan Chen,Yubo Luo,Ctirad Uher,Christopher Wolverton,Vinayak P. Dravid,Yan Yu,Zhong‐Zhen Luo,Zhigang Zou,Qingyu Yan,Mercouri G. Kanatzidis
标识
DOI:10.1002/aenm.202203325
摘要
Abstract This study investigates Ga‐doped n‐type PbTe thermoelectric materials and the dynamic phase conversion process of the second phases via Cu 2 Se alloying. Introducing Cu 2 Se enhances its electrical transport properties while reducing its lattice thermal conductivity (κ lat ) via weak electron–phonon coupling. Cu 2 Te and CuGa(Te/Se) 2 (tetragonal phase) nanocrystals precipitate during the alloying process, resulting in Te vacancies and interstitial Cu in the PbTe matrix. At room temperature, Te vacancies and interstitial Cu atoms serve as n‐type dopants, increasing the carrier concentration and electrical conductivity from ≈1.18 × 10 19 cm −3 and ≈1870 S cm −1 to ≈2.26 × 10 19 cm −3 and ≈3029 S cm −1 , respectively. With increasing temperature, the sample exhibits a dynamic change in Cu 2 Te content and the generation of a new phase of CuGa(Te/Se) 2 (cubic phase), strengthening the phonon scattering and obtaining an ultralow κ lat . Pb 0.975 Ga 0.025 Te‐3%CuSe exhibits a maximum figure of merit of ≈1.63 at 823 K, making it promising for intermediate‐temperature device applications.
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