兴奋剂
材料科学
光电子学
碳化硅
化学
复合材料
作者
A. A. Lebedev,P. L. Abramov,E. V. Bogdanova,С. П. Лебедев,D. K. Nelson,G. A. Oganesyan,A. S. Tregubova,R. Yakimova
标识
DOI:10.1088/0268-1242/23/7/075004
摘要
Highly doped p-3C–SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ∼EV + 0.25 eV and at EV + 0.06–0.07 eV exist in the samples studied. A conclusion is reached that layers of this kind can be used as p-emitters in 3C–SiC devices.
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