响应度
异质结
光电子学
光电探测器
材料科学
双极结晶体管
格子(音乐)
光电二极管
物理
晶体管
电压
量子力学
声学
作者
Harshvardhan Kumar,В. А. Тимофеев,Rikmantra Basu
出处
期刊:IEEE Sensors Journal
[Institute of Electrical and Electronics Engineers]
日期:2023-12-01
卷期号:23 (23): 28759-28768
标识
DOI:10.1109/jsen.2023.3319501
摘要
This work proposes a high-performance lattice-matched SiGeSn/GeSn/SiGeSn heterojunction bipolar phototransistors (HPTs) and p-i-n photodiodes (PDs) grown on strain-free SiGeSn virtual substrate (VS) capable of working in mid-wave infrared (MWIR) bands. To obtain a strain-free structure, the lattice matching requirement at the SiGeSn/GeSn/SiGeSn heterointerfaces is considered to significantly minimize the interface and defect states in the proposed device. In order to have the same lattice constant, appropriate Si and Sn alloying can be used to grow lattice-matched SiGeSn/GeSn/SiGeSn heterostructures. Using the finite element method, device structures considering the material’s experimental data are simulated and also compared against theoretical data. Additionally, at λ = 2000 nm, the effect of theoretical and experimental values of the absorption coefficient on the responsivity is also demonstrated at room temperature. The result reveals that the experimental absorption coefficient has a significant impact and greatly lowers the devices’ responsivity. A strain-free HPT ( p-i-n PD) structure(s) allows for attaining a responsivity and bandwidth of 28.5 (0.97) A/W and 29.5 (91.22) GHz, respectively at λ = 2000 nm. Moreover, the proposed HPT ( p-i-n PD) exhibits a high signal-to-noise ratio (SNR) of 68.4 (31.8) dB up to 10 GHz operating frequency. These values are higher than previously reported results, showing the potential of the proposed lattice-matched detectors for MWIR applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI