Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm-3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.