Hydrogen Role on the Properties of Silicon Nitride for Flexible Thin Film Encapsulation

High transmittance, high density, and good mechanical properties of silicon nitride (SiN x ) make it a potential candidate for barrier layers of flexible organic light emission diodes (FOLEDs). However, the overall characteristics and water oxygen barrier properties of the films are easily affected by the dangling bonds in the films. After adding hydrogen flow rate to the deposition conditions of SiN x films, the hydrogen content interacts with the dangling bonds in amorphous SiN x , which could reduce the number of dangling bonds and improve the density of the hydrogenated amorphous silicon nitride (SiN x H y ) films. The high‐density film layer could effectively prevent the invasion of water vapor due to its smaller pinhole density. Therefore, the water oxygen barrier performance of SiN x H y is significantly improved, the maximum decrease in water vapor transmittance rate (WVTR) value is approximately 22.4%. In addition, the increase of hydrogen content also changed the overall properties of the films, including transmittance, elastic modulus, hardness, residual stress, and fracture strain. Therefore, compared with SiN x films, SiN x H y films have more excellent mechanical and optical properties. The SiN x H y films featuring a simplified preparation process with high efficiency, low cost, and superior barrier performance is of great potential for the commercial applications.