材料科学
响应度
黑体辐射
超短脉冲
光电子学
红外线的
比探测率
异质结
光学
光电探测器
辐射
物理
激光器
作者
Yu Yu,Zhiyuan Dai,Haibiao Guan,Ruowen Wang,Ye Tao,Yonghao Bu,Jie Deng,Mengdie Shi,Liaoxin Sun,Rui Xin,Tianxin Li,Haibo Shu,Xiaohong Chen,Jing Zhou
标识
DOI:10.1002/adom.202400776
摘要
Abstract Blackbody‐sensitive uncooled infrared photodetectors with ultra‐broadband and ultrafast photoresponse have a profound impact on many areas of modern science and technology. However, it is a big challenge for both traditional photodetectors and emerging low‐dimensional ones to simultaneously have all the above characteristics. Here, this challenge is addressed by establishing a Te/WTe 2 heterostructure photodetector. The built‐in field of the heterostructure and the crossing conduction and valence bands of WTe 2 jointly result in a high responsivity and a visible‐to‐long‐wavelength‐infrared photoresponse range. The peak responsivity (at the 3.3 µm wavelength) reaches 914 mA W −1 at zero bias and 8.51 A W −1 at 2 V bias. Further, the joint action coupled with the high mobility of Te and WTe 2 promotes the 3‐dB bandwidth to 153 kHz. The self‐powered blackbody responsivity and specific detectivity reach 235.7 mA W −1 and 1.1 × 10 8 cm Hz 1/2 W −1 , respectively. The former increases to 5.82 A W −1 at 1 V bias. Moreover, this device is polarization‐sensitive with a contrast ratio of 2. This work reveals the potential of the Te/WTe 2 heterostructure for high‐performance room‐temperature infrared photodetectors.
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