钻石
带材弯曲
兴奋剂
接受者
电子转移
金刚石材料性能
化学物理
氢
材料科学
化学
费米能级
电子
纳米技术
凝聚态物理
光电子学
光化学
复合材料
物理
有机化学
量子力学
作者
Qingzhong Gui,Wei Yu,Chunmin Cheng,Hailing Guo,Xiaoming Zha,Ruyue Cao,Hongxia Zhong,John Robertson,Sheng Liu,Zhaofu Zhang,Zhuo Jiang,Yuzheng Guo
标识
DOI:10.1016/j.jmst.2024.04.030
摘要
The surface transfer doping model has been extensively adopted as a mechanism to account for the generation of hole accumulation layers below hydrogen-terminated diamond (H-diamond) surfaces. To achieve effective surface transfer doping, surface electron acceptor materials with high electron affinity (EA) are required to produce a high density of two-dimensional hole gas (2DHG) on the H-diamond subsurface. We have established ingenious theoretical models to demonstrate that even if these solid materials do not have a high EA value, they remain capable of absorbing electrons from the H-diamond surface by forming a negatively charged interface to act as a surface electron acceptor in the surface transfer doping model. Our calculations, particularly for the local density of states, provide compelling evidence that the effect of an interface with negative charges induces an upward band bending on the H-diamond side. Furthermore, the valence band maximum of the diamond atoms at the interface crosses the Fermi level, giving rise to strong surface transfer p-type doping. These results give a strong theoretical interpretation of the origin of 2DHG on H-diamond surfaces. The proposed guidelines contribute to further improvements in the performance of 2DHG H-diamond field effect transistors.
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