材料科学
光电子学
肖特基二极管
二极管
镓
阳极
基质(水族馆)
铟
击穿电压
肖特基势垒
宽禁带半导体
溅射沉积
溅射
电压
薄膜
电气工程
纳米技术
化学
电极
冶金
物理化学
工程类
地质学
海洋学
作者
Qian Xin,Linlong Yan,Yi Luo,Aimin Song
摘要
In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.
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