王水
X射线光电子能谱
蚀刻(微加工)
氯
分析化学(期刊)
铟
材料科学
化学
杂质
无机化学
核化学
化学工程
金属
冶金
图层(电子)
纳米技术
色谱法
有机化学
工程类
作者
C. J. Huang,Yan‐Kuin Su,Songhua Wu
标识
DOI:10.1016/j.matchemphys.2003.11.021
摘要
In this study, the effect of solvents, HCl and aqua regia at room temperature, on the etching behavior of ITO film was investigated. A higher etching rate was obtained in aqua regia than in HCl. However, via XPS analysis, it was found that there was more surface residual byproduct in aqua regia etchant than in HCl. The surface concentration (ratio of chlorine to indium) was 7.2 and 0.38 in aqua regia and HCl, respectively. It was also observed that the surface residual byproduct reduced the carrier mobility due to the ionized impurity scattering. As seen in the ITO pattern after the etching process, a serious undercut occurred with the aqua regia due to the fast etching rate. Thus, the 9 M HCl solution is more suitable as an etchant for ITO/OLED application.
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