暗电流
光电探测器
泄漏(经济)
光电子学
材料科学
红外线的
比探测率
超晶格
扩散电流
砷化铟
量子效率
红外探测器
探测器
砷化镓
光学
电流(流体)
物理
经济
宏观经济学
热力学
作者
G. Chen,B.-M. Nguyen,A. M. Hoang,Edward Kwei-wei Huang,S. R. Darvish,Manijeh Razeghi
摘要
The electrical performance of mid-infrared type-II superlattice M-barrier photodetectors is shown to be limited by surface leakage. By applying gate bias on the mesa sidewall surface, leakage current is significantly reduced. Qualitatively IV modeling shows diffusion-dominated behavior of dark current at temperatures greater than 120 K. At 110 K, the dark current of gated device is reduced by more than 2 orders of magnitude, reaching the measurement system noise floor. With a quantum efficiency of 48% in front side illumination configuration, a 4.7μm cut-off gated device attains a specific detectivity of 2.5 × 1014 cmHz1/2/W at 110 K, which is 3.6 times higher than in ungated devices.
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