Ying‐Hsuan Liu,Afshin Dadvand,Hatem M. Titi,Ehsan Hamzehpoor,Dmitrii F. Perepichka
出处
期刊:CrystEngComm [The Royal Society of Chemistry] 日期:2021-01-01卷期号:23 (47): 8255-8259被引量:2
标识
DOI:10.1039/d1ce01047f
摘要
A series of new halogenated bis(acenaphthylene)dione (BAN) derivatives was synthesized, and the effect of halogen bonding on both molecular and crystal structure, and charge transport in n-type thin film transistors was investigated.