P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs

We studied the effect of a‐IGZO thickness (t IGZO ) on device uniformity and drain current (I D ) of a‐IGZO thin‐film‐transistors (TFTs) driven by the single gate (SG) and dual‐gate driving (DG‐driving). Numerical simulation using fitting density‐of‐states (DOS) exhibits ~5 times larger I D and excellent uniformity with DG‐driving TFTs for a‐IGZO t IGZO <20 nm than SG‐TFT and enables the opportunity of high yield backplanes using DG‐TFTs for next generation high‐performance display applications.