神经形态工程学
材料科学
光电子学
晶体管
电介质
神经促进
薄膜晶体管
图层(电子)
纳米技术
计算机科学
兴奋性突触后电位
化学
电气工程
电压
人工神经网络
生物化学
受体
机器学习
工程类
作者
Su‐Kyung Kim,Jong‐Ho Kim,Kwang‐Ro Yun,Tae‐Ju Lee,Tae‐Yeon Seong
标识
DOI:10.1002/admt.202301604
摘要
Abstract The development of high‐mobility neuromorphic transistors is essential to increase signal transmission speed and solve the von Neumann bottleneck issue. Herein, this work proposes cross‐linked Poly(4‐vinylphenol) (c‐PVP) as a dielectric layer to form an electric double layer (EDL), which plays a key role in synaptic transistors, and measure the ratio‐dependent characteristics of cross‐linking agents in c‐PVP. When the ratio of PVP to poly(melamine‐ co ‐formaldehyde) methylated (PMF) is 10:1, neuromorphic transistors is found to show the best performance with a memory window of 2.2 V and a mobility of 93.4 cm 2 V −1 s −1 . Fourier‐transform infrared spectroscopy (FT‐IR) results show that the reduction in the concentration of the cross‐linking agent generates more hydroxyl groups within the c‐PVP film. The 10:1 c‐PVP‐based synaptic device has an ultra‐low energy consumption of 15.8 pJ for a single pulse and a maximum paired pulse facilitation (PPF) index value of 291%. Additionally, synaptic characteristics, such as pulse duration time dependent plasticity, pulse intensity dependent plasticity, pulse rate dependent plasticity (SRDP), high band filtering, and short‐term memory (STM) conversion to long‐term memory (LTM), are also described and discussed. These results suggest that c‐PVP/ZnON‐based neuromorphic devices can be promising artificial synapses for memory and learning capabilities.
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