自旋电子学
磁化
凝聚态物理
扭矩
铁磁性
物理
多铁性
磁阻随机存取存储器
材料科学
计算机科学
磁场
铁电性
光电子学
量子力学
计算机硬件
电介质
随机存取存储器
作者
Dongxing Yu,Yonglong Ga,Jinghua Liang,Chenglong Jia,Hongxin Yang
标识
DOI:10.1103/physrevlett.130.056701
摘要
Magnetization switching is the most important operation in spintronic devices. In modern nonvolatile magnetic random-access memory (MRAM), it is usually realized by spin-transfer torque (STT) or spin-orbit torque (SOT). However, both STT and SOT MRAM require current to drive magnetization switching, which will cause Joule heating. Here, we report an alternative mechanism, Dzyaloshinskii-Moriya interaction (DMI) torque, that can realize magnetization switching fully controlled by voltage pulses. We find that a consequential voltage-controlled reversal of DMI chirality in multiferroics can lead to continued expansion of a skyrmion thanks to the DMI torque. Enough DMI torque will eventually make the skyrmion burst into a quasiuniform ferromagnetic state with reversed magnetization, thus realizing the switching of a perpendicular magnet. The discovery is demonstrated in two-dimensional multiferroics, CuCrP_{2}Se_{6} and CrN, using first-principles calculations and micromagnetic simulations. As an example, we applied the DMI torque for simulating leaky-integrate-fire functionality of biological neurons. Our discovery of DMI torque switching of perpendicular magnetization provides tremendous potential toward magnetic-field-free and current-free spintronic devices, and neuromorphic computing as well.
科研通智能强力驱动
Strongly Powered by AbleSci AI