单层
吸附
材料科学
密度泛函理论
兴奋剂
化学物理
分子
纳米技术
物理化学
计算化学
化学工程
化学
有机化学
光电子学
工程类
作者
Jinhuang Chen,Lufen Jia,Xianlan Cui,Wen Zeng,Qu Zhou
标识
DOI:10.1016/j.mtchem.2023.101382
摘要
This paper first proposed to modify the GeSe monolayer by doping Co and Cr atoms and investigated the potential application in the monitoring SF6 insulation equipment. The adsorption mechanism of these three gases on Co/Cr-Gese monolayers is systematically studied based on density functional theory. The adsorption mechanism of three gas molecules on the new sensors (Co-GeSe and Cr-GeSe) was evaluated from the aspects of adsorption energy, charge transfer amount, energy band structure, molecular frontier orbital, and recovery time. The results show that Co and Cr modification can significantly improve surface activity of the intrinsic GeSe monolayer, which can make the intrinsic GeSe monolayer possess better absorption and sensing performance. Especially, the Cr-GeSe monolayer gets more sensitive to the target gas, indicating this monolayer has the prospect of becoming the adsorption material of the target gas (SO2, SOF2, and SO2F2). The reasonable adsorption energy and large change of bandgap indicate that Co-GeSe monolayer can be a potential candidate for SO2 and SOF2 sensors. In addition, this work provides theoretical guidance for the further study of transition metal-doped GeSe monolayer for detecting the decomposition products of SF6 in the field of electrical engineering.
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