抖动
二极管
兴奋剂
光子
光电子学
单光子雪崩二极管
材料科学
物理
波长
电压
雪崩二极管
光学
探测器
雪崩光电二极管
电气工程
击穿电压
工程类
量子力学
作者
Eunsung Park,Won-Yong Ha,Doyoon Eom,Dae‐Hwan Ahn,Hee Ju An,Sang‐Yun Yi,Kyungdo Kim,Jongchae Kim,Woo-Young Choi,Myungjae Lee
标识
DOI:10.23919/vlsitechnologyandcir57934.2023.10185229
摘要
We report on back-illuminated single-photon avalanche diodes (SPADs) based on 40 nm CIS technology. The SPAD performance is optimized with doping engineering, enabling the extension of the effective active area resulting in much higher efficiency. It achieves a dark count rate (DCR) of $15 \mathrm{cps} / \mathrm{\mu m}^{2}$, timing jitter of 97 ps, and excellent photon detection probability (PDP) in near-infrared (NIR) wavelength of about 60% at 905 nm and 44% at 940 nm at the excess bias voltage $\left(V_{E}\right)$ of 2.5 V.
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