Phenyl-Naphthyl Amine Effect of New Phenothiazine Derivatives with High Tg for Hole Injection and Hole Transporting Materials

We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3",7"-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high T(g) in the range of 175-202 degrees C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm2.