Shahadat H. Sohel,Andy Xie,Edward Beam,Hao Xue,J.A. Roussos,Towhidur Razzak,Sanyam Bajaj,Yu Cao,David J. Meyer,Wu Lu,Siddharth Rajan
出处
期刊:IEEE Electron Device Letters [Institute of Electrical and Electronics Engineers] 日期:2018-10-08卷期号:39 (12): 1884-1887被引量:34
标识
DOI:10.1109/led.2018.2874443
摘要
We report on the power and linearity performance of metal organic chemical vapor deposition grown AlGaN channel polarization-graded field-effect transistor (PolFET). The fabricated transistors with 3-D electron channels showed nearly flat transconductanceprofiles. Maximum f T and fmax of 23 and 65 GHz were measured for 0.7-μm gate-length transistors, corresponding to an f T -L G product of 16.2 GHz·μm. Load-pull measurement at 10 GHz revealed a maximum output power of 2 W/mm with a maximum small signal gain of 16 dB. Two-tone measurement at 10 GHz showed an OIP3 of 33 dBm for 150-μm device width and a corresponding linearity figure-of-merit OIP3/PDC of 3.4 dB. These results suggest that PolFETs could be useful for high-frequency applications requiring high linearity.