Accurate Determination of Matrix Composition in CdxZn1−xO SemiconductorMaterial Using MS SIMS and TOF SIMS methods

Abstract This study focuses on the method for determining the exact composition for Cd x Zn 1−x O semiconducting material using secondary ion mass spectrometry. The calibration curve method was employed to establish a quantitative relationship between the intensity of the secondary ions and the concentrations of the elements in Cd x Zn 1−x O thin films. Additionally, the study compares the relative sensitivity factors and the calibration curve method for determining the value of x in Cd x Zn 1−x O. Furthermore, a comparison between the performances of Time of Flight and Magnetic Sector SIMS in the analysis of Cd x Zn 1−x O thin films is presented. This approach aims to enhance the accuracy and reliability of quantitative analysis in SIMS for Cd x Zn 1−x O thin films.