极紫外光刻
平版印刷术
表面光洁度
材料科学
极端紫外线
表面粗糙度
计算光刻
光学
下一代光刻
光学(聚焦)
抵抗
光电子学
光刻
X射线光刻
电子工程
纳米技术
电子束光刻
物理
工程类
复合材料
激光器
图层(电子)
出处
期刊:Journal of Micro-nanolithography Mems and Moems
[SPIE - International Society for Optical Engineering]
日期:2018-08-07
卷期号:17 (04): 1-1
被引量:31
标识
DOI:10.1117/1.jmm.17.4.041006
摘要
Pattern roughness is a major problem in advanced lithography for semiconductor manufacturing, especially for the insertion of extreme ultraviolet (EUV) lithography as proposed in the coming years. Current approaches to roughness reduction have not yielded the desired results. Here, a global optimization approach is proposed, taking advantage of the different strengths and weaknesses of lithography and etch. Lithography should focus on low-frequency roughness by minimizing both the low-frequency power spectral density (PSD) and the correlation length. Etch should focus on high frequency roughness by growing the correlation length. By making unbiased measurements of the roughness, including the PSD, the parameters needed to guide these optimization efforts become available. The old approach, of individually seeking to reduce the 3σ roughness of pre- and postetch features, is unlikely to lead to the required progress in overall roughness reduction for EUV.
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