钙钛矿(结构)
材料科学
带隙
串联
能量转换效率
光电子学
兴奋剂
钝化
纳米技术
图层(电子)
化学
结晶学
复合材料
作者
Rui He,Tingting Chen,Zhipeng Xuan,Tianzhen Guo,Jincheng Luo,Yiting Jiang,Wenwu Wang,Jingquan Zhang,Xia Hao,Lili Wu,Ye Wang,Iordania Constantinou,Shengqiang Ren,Dewei Zhao
出处
期刊:Nanophotonics
[De Gruyter]
日期:2020-06-01
卷期号:10 (8): 2059-2068
被引量:17
标识
DOI:10.1515/nanoph-2020-0634
摘要
Abstract Wide-bandgap (wide- E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide- E g PSCs with a minimized open-circuit voltage ( V oc ) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide- E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc . Incorporation of TBB prolongs carrier lifetimes in wide- E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).
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