钇
等离子体
材料科学
过程(计算)
冶金
物理
核物理学
氧化物
计算机科学
操作系统
作者
Yoshitaka Shiba,Akinobu Teramoto,Tetsuya Goto,Yukio Kishi,Yoshihito Shirai,Shigetoshi Sugawa
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2017-01-31
卷期号:35 (2)
被引量:29
摘要
An yttrium oxyfluoride (YOF) protective material was developed for the inner wall of plasma process equipment. Using microwave-excited surface-wave high-density plasma equipment, the chemical stability of the obtained YOF films was evaluated by exposure to H2/Ar, N2/Ar, NH3/Ar, O2/Ar, and NF3/Ar plasmas. The YOF film surface was stable against these plasmas containing hydrogen, nitrogen, oxygen, and fluorine. Especially, the stability of YOF against fluoridation was better than that of Y2O3, which is currently widely used as the protective material in plasma process chambers.
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