Solution‐Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability

Advanced MaterialsVolume 24, Issue 41 p. 5576-5580 Communication Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability Shaohua Dong, Shaohua Dong Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorHongtao Zhang, Hongtao Zhang Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorLiu Yang, Liu Yang Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR ChinaSearch for more papers by this authorMeilin Bai, Meilin Bai Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorYuan Yao, Yuan Yao Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorHongliang Chen, Hongliang Chen Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorLin Gan, Lin Gan Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorTieying Yang, Tieying Yang Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, PR ChinaSearch for more papers by this authorHong Jiang, Hong Jiang Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorShimin Hou, Shimin Hou Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorLijun Wan, Lijun Wan Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR ChinaSearch for more papers by this authorXuefeng Guo, Corresponding Author Xuefeng Guo guoxf@pku.edu.cn Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871, PR ChinaCenter for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China.Search for more papers by this author Shaohua Dong, Shaohua Dong Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorHongtao Zhang, Hongtao Zhang Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorLiu Yang, Liu Yang Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR ChinaSearch for more papers by this authorMeilin Bai, Meilin Bai Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorYuan Yao, Yuan Yao Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorHongliang Chen, Hongliang Chen Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorLin Gan, Lin Gan Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorTieying Yang, Tieying Yang Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, PR ChinaSearch for more papers by this authorHong Jiang, Hong Jiang Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorShimin Hou, Shimin Hou Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, PR ChinaSearch for more papers by this authorLijun Wan, Lijun Wan Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR ChinaSearch for more papers by this authorXuefeng Guo, Corresponding Author Xuefeng Guo guoxf@pku.edu.cn Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871, PR ChinaCenter for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China.Search for more papers by this author First published: 12 September 2012 https://doi.org/10.1002/adma.201202099Citations: 32Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract Molecular engineering and chemical self-assembly are combined with materials fabrication to achieve air-stable solution-processable oligothiophene-based field-effect transistors with mobilities up to 6.2 cm2 V−1 s−1, which ranks as the highest among oliogthiophene-based semiconducting materials. Citing Literature Supporting Information Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201202099_sm_suppl.pdf663.4 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume24, Issue41November 2, 2012Pages 5576-5580 RelatedInformation