材料科学
产量(工程)
氮化硅
氮化物
工程物理
硅
光电子学
纳米技术
冶金
图层(电子)
工程类
作者
Hairong Zhu,Lei Yan,Zhi-Qiang Gao,Xujie Li,Ping Peng,Yuan Lin
标识
DOI:10.1149/2162-8777/ad52c3
摘要
Passivated emitter and rear contact (PERC) solar cells possess the highest photovoltaic market share at present. In industrial production, blistering of the rear silicon nitride (SiN x ) passivation layer significantly affects the yield. In order to solve this problem, the relevant processes for manufacturing the PERC solar cells have been carefully studied. It was found that polishing of the silicon wafer rear surface, aluminum (AlO x ) thickness, and the deposition process of the SiN x layer will affect the blistering ratio. By optimizing the manufacturing process mentioned above, the blistering ratio of the PERC solar cells has been effectively suppressed. This work not only provides reliable technical support for the yield improvement of the PERC solar cells but also provides some useful reference for the tunnel oxide passivated contact (TOPcon) and back contact (BC) solar cell industrial manufacture.
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