作者
Xinyu Chen,Yufeng Xie,Yaochen Sheng,Hongwei Tang,Zeming Wang,Yu Wang,Yin Wang,Fuyou Liao,Jingyi Ma,Xiaojiao Guo,Ling Tong,Hanqi Liu,Hao Liu,Tianxiang Wu,Jiaxin Cao,Sitong Bu,Hui Shen,Fuyu Bai,Daming Huang,Jianan Deng,Antoine Riaud,Zihan Xu,Chenjian Wu,Shiwei Xing,Ye Lü,Shunli Ma,Zhengzong Sun,Zhongyin Xue,Zengfeng Di,Xiao Gong,David Wei Zhang,Peng Zhou,Jing Wan,Wenzhong Bao
摘要
Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.