Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses

Abstract Ultrafast switching is an attractive performance for resistive random access memory (RRAM) as one of the next‐generation nonvolatile memory options. A high‐speed measurement setup is designed and constructed to characterize the RESET operation of HfO x ‐based RRAM device with sub‐nanosecond pulse. The analysis of the RESET process is quantitatively performed by studying the relationship between resistance and pulse conditions. Experimental data show that stable resistive switching can be achieved by sub‐nanosecond pulse on HfO x ‐based RRAM. A compact model is built based on high‐speed RESET measurement results, and it is found that the oxygen ions migration driven by the electric field is the dominant factor during the sub‐nanosecond pulse RESET process rather than thermal effect. It demonstrates HfO x ‐based RRAM has great potential on extremely high‐speed memory applications.