UV Excimer Laser Annealing for Next Generation Power Electronics

Advanced processes for next generation power devices have been studied in this paper. For silicon (Si)-IGBT applications, a near-perfect deep activation of over 4μm depth has been demonstrated in a phosphorous (Ph) doped Si wafer. In addition, progresses of epitaxial regrowth and ohmic contact formation on a silicon-carbide (SiC) wafer have been reported.