硫系化合物
超短脉冲
相变存储器
计算机科学
皮秒
实现(概率)
非易失性存储器
电子工程
阈值电压
切换时间
材料科学
神经形态工程学
快速切换
光电子学
纳米技术
电压
晶体管
电气工程
物理
工程类
光学
人工智能
激光器
统计
数学
人工神经网络
图层(电子)
作者
Nishant Saxena,Anbarasu Manivannan
标识
DOI:10.1002/pssr.202200101
摘要
Discovery of electrical switching in chalcogenide glasses by S.R. Ovshinsky paves a new path for developing high‐speed nonvolatile electronic memory and high‐performance computing solutions. This article presents a review on the systematic understanding of threshold switching (TS) properties in various chalcogenide materials, Ovonic threshold switching (OTS) and Ovonic memory switching (OMS), the nature of TS, voltage‐dependent transient characteristics, and the role of TS in governing the programming speed based on research efforts over the last six decades. Furthermore, realization of TS in picosecond timescale, the commonalities between OTS and OMS, and the possible underlying mechanism has been explored. Furthermore, a scheme of material classification based on TS dynamics for ultrafast yet energy‐efficient programming has been proposed for phase‐change memory with SRAM‐like programming speed for future electronics.
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