掺杂剂
材料科学
带隙
硒化锌
兴奋剂
扫描电子显微镜
氧化锡
锌
钴
化学浴沉积
氧化钴
薄膜
分析化学(期刊)
硒化物
电导率
无机化学
纳米技术
光电子学
化学
冶金
物理化学
硒
复合材料
色谱法
作者
Imosobomeh L. Ikhioya,Cyril O. Ugwuoke,Donald N. Okoli,Azubuike J. Ekpunobi,M. Mâaza,Fabian I. Ezema
标识
DOI:10.1016/j.crgsc.2022.100328
摘要
This paper provides a detailed report on the effect of molar concentration on structural, optical and electrical properties of cobalt doped zinc selenide (ZnSe:Co) thin film. The molar concentration Co dopant was varied within 0%, 0.1%, 0.2% and 0.3%. ZnSe:Co was synthesized using the electrodeposition method. Different characterization techniques such as X-ray diffractometry, scanning electron microscope and four-point probe were used to study the optical, surface morphology and electrical properties of ZnSe:Co. The XRD analysis revealed that both Co-doped and undoped ZnSe are crystalline materials. The crystalline structure of ZnSe is cubic but changes to a face-centred cubic structure upon introduction of Co dopant. ZnSe:Co showed excellent absorbance, optical conductivity and refractive index. The energy bandgap was observed to decrease from 2.2 - 2.0 eV as the molar percentage increased from 0.1 – 0.3%. The conductivity of the cobalt doped Zinc selenide was observed to be 1.4244×1011, 1.6655×1011, 1.6655×1011, and 2.4929×1011 (S/m) for film grown with 0%, 0.1%, 0.2% and 0.3% Co dopant respectively.
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