材料科学
X射线光电子能谱
拉曼光谱
扫描电子显微镜
吸附
选择性
基质(水族馆)
光谱学
电阻式触摸屏
衍射
GSM演进的增强数据速率
光电子学
分析化学(期刊)
纳米技术
化学工程
光学
复合材料
化学
工程类
有机化学
计算机科学
催化作用
地质学
物理
电气工程
色谱法
海洋学
电信
量子力学
生物化学
作者
Rahul Kumar,P.K. Kulriya,Monu Mishra,Fouran Singh,Govind Gupta,Mahesh Kumar
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2018-08-31
卷期号:29 (46): 464001-464001
被引量:94
标识
DOI:10.1088/1361-6528/aade20
摘要
We demonstrate a highly selective and reversible NO2 resistive gas sensor using vertically aligned MoS2 (VA-MoS2) flake networks. We synthesized horizontally and vertically aligned MoS2 flakes on SiO2/Si substrate using a kinetically controlled rapid growth CVD process. Uniformly interconnected MoS2 flakes and their orientation were confirmed by scanning electron microscopy, x-ray diffraction, Raman spectroscopy and x-ray photoelectron spectroscopy. The VA-MoS2 gas sensor showed two times higher response to NO2 compared to horizontally aligned MoS2 at room temperature. Moreover, the sensors exhibited a dramatically improved complete recovery upon NO2 exposure at its low optimum operating temperatures (100 °C). In addition, the sensing performance of the sensors was investigated with exposure to various gases such as NH3, CO2, H2, CH4 and H2S. It was observed that high response to gas directly correlates with the strong interaction of gas molecules on edge sites of the VA-MoS2. The VA-MoS2 gas sensor exhibited high response with good reversibility and selectivity towards NO2 as a result of the high aspect ratio as well as high adsorption energy on exposed edge sites.
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