材料科学
光电子学
基质(水族馆)
极限抗拉强度
晶体管
硅
拉伤
电子迁移率
拉伸应变
复合材料
电气工程
电压
工程类
地质学
内科学
海洋学
医学
作者
Hsuan‐Ling Kao,Hsien‐Chin Chiu,Shuang-Hao Chuang,Hsiao‐Hsuan Hsu
标识
DOI:10.1149/2162-8777/ab8786
摘要
This paper reports pulsed DC and RF characteristics of GaN high-electron-mobility transistors (HEMTs) on a silicon substrate under external mechanical tensile strain. Tensile strain enhanced two-dimensional electron gas (2DEG) density resulted in increasing ID, fT and fmax at CW measurement. Eliminating self-heating by pulse measurement, DC and RF characteristics between flat and bend devices were slightly increased for small-width devices, and decreased for wide-width devices. This was because maximum electron drift velocity was reduced by a hot phonon effect while 2DEG density increased by tensile strain for wide-width devices. Results indicated that the tensile strain on thinner substrates decreased the DC and RF performances of wide-width GaN-based RF power devices. This phenomenon should be considered while using GaN-based RF power devices for compact packages, especially in high-power applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI