二甲基亚砜
涂层
太阳能电池
薄膜
带隙
化学工程
化学
旋涂
吸收(声学)
材料科学
能量转换效率
光学
纳米技术
复合材料
光电子学
有机化学
工程类
物理
作者
Jia Li,Xiuxun Han,Yun Zhao,Jian Li,Min Wang,Xiuxun Han
标识
DOI:10.1016/j.solmat.2017.09.050
摘要
A large–grain and highly crystalline Cu3BiS3 thin film is successfully prepared by a dimethyl sulfoxide (DMSO)–based solution coating process. Without involving post sulfurization, Cu3BiS3 absorber with grain size of ~ 1 µm has been achieved via a short-time drying of spin–coated precursor film on a hot plate at relatively low temperatures (< 300 °C). Our Cu3BiS3 film exhibits a direct band gap of 1.47 eV with high absorption coefficients (~ 7 × 104 cm−1). Hall effect measurements reveal a p–type conductivity with hole concentration of ~ 1016 cm−3 and mobility of 52.83 cm2/(V s). Moreover, an initial Cu3BiS3 thin film solar cell with the device structure of glass/Mo/Cu3BiS3/CdS/ZnO/ITO/Al is fabricated, achieving a definite conversion efficiency of 0.17%. The mild preparation condition promises great potential of current method in realizing Cu3BiS3 solar cells on temperature-sensitive substrates such as flexible polymer through an energy efficient way. The Cu3BiS3 has thus been presented as a promising absorber material for solar cell applications.
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