材料科学
结晶度
薄膜
原子层沉积
三甲基镓
带隙
等离子体
宽禁带半导体
图层(电子)
化学工程
纳米技术
光电子学
金属有机气相外延
外延
复合材料
物理
量子力学
工程类
作者
Shi-Cong Jiang,Wan-Yu Wu,Fang-Bin Ren,Chia‐Hsun Hsu,Xiaoying Zhang,Peng Gao,Dong‐Sing Wuu,Chien-Jung Huang,Shui‐Yang Lien,Wen‐Zhang Zhu
标识
DOI:10.3390/ijms232416204
摘要
In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH3-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH2, NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH2 radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH3/Ar plasma PEALD involving oxygen participation or not is also discussed in the study.
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