A Case Study of 2D Bi2O2Se Nanoplate Near‐Infrared Photodetectors from the Perspective of Practical Applications

Abstract Over the past several decades infrared (IR) photodetectors have received wide attention due to their important applications. 2D materials, distinguished by their unique electronic structures, ultimate dimensional confinement, and robust light‐matter interactions, provide a promising candidate for fabricating future IR photodetectors. However, there is a lack of reports concerning the practical industrial applications of these 2D photodetectors, despite that some of these 2D photodetectors have demonstrated performance exceeding that of commercial photodetectors. In this work, a case study on 2D Bi 2 O 2 Se nanoplate near‐infrared photodetectors from the perspective of practical applications is presented. With the characterization method used for nano detectors, the 2D Bi 2 O 2 Se photodetector exhibits a responsivity of 212.5 A W −1 , a specific detectivity of 4.99 × 10 11 Jones and an external quantum efficiency of 26 887.68% at wavelength of 980 nm, while with the traditional characterization method the photodetector shows a responsivity of 0.13 A W −1 and a specific detectivity of 2.26 × 10 6 Jones and an external quantum efficiency of 17.87% at wavelength of 900 nm. The Bi 2 O 2 Se nanoplate photodetector also presents good passive imaging quality in the near‐infrared wavelength region. These results suggest the great potential of Bi 2 O 2 Se nanoplate photodetectors for practical applications.