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28 积分 2024-07-31 加入
Ambipolar 2D Semiconductors and Emerging Device Applications
2天前
已完结
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection
2个月前
已完结
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region
2个月前
已完结
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers
2个月前
已完结
Interconnect‐Integrated GaInP/AlGaAs Schottky Photodetector Array with Heterojunction‐Assisted Enhanced Photovoltaic Effect for Automotive Speed Measurement Systems
3个月前
已完结
Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions
4个月前
已完结
Ionization rates and critical fields in 4H silicon carbide
4个月前
已完结
Enhanced light–matter interaction in two-dimensional transition metal dichalcogenides
4个月前
已完结
Optimization of a 4H-SiC Schottky diode using TCAD software
4个月前
已关闭
A multiple-floating-zone-assisted graded-step-JTE for high-voltage 4H-SiC GTO thyristor
4个月前
已完结
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