Lv11
30 积分 2023-02-17 加入
50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V
1小时前
待确认
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
11天前
已完结
Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process
1个月前
已完结
Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD
1个月前
已完结
Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters
1个月前
已完结
Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
1个月前
已完结
An Enhancement-Mode Algan/GaN HEMT with Island-Ohmic p-GaN Featuring Stable Threshold voltage and Large Gate Swing
1个月前
已完结
Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium
1个月前
已完结
Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
1个月前
已完结
Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition
1个月前
已完结
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