Lv11
60 积分 2024-04-23 加入
GaN HEMT for High-performance Applications: A Revolutionary Technology
2小时前
已关闭
Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED
2小时前
已关闭
Designing a Vertical Gallium Arsenide (GaAs) Channel High Electron Mobility Transistor (HEMT) for power applications in integrated circuit (IC) technology
2个月前
已关闭
Beyond SiliconIII-V Material-Based Lateral and Vertical HEMTs for High-Power and High-Speed Switching Applications
2个月前
已关闭
Study and optimising performance of enhancement-mode monolithically integrated white-light HEMT-LED by inserting of InGaN quantum wells
4个月前
已完结
Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs
5个月前
已完结
Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
5个月前
已完结
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
5个月前
已完结
Auger recombination in InGaN measured by photoluminescence
5个月前
已完结
皖公网安备34019202002308
