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170 积分 2023-08-20 加入
Homogeneous in Distribution of InGaN/GaN Quantum Wells in High Performance GaN-Based Light-Emitting Devices
2个月前
已完结
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining
2个月前
已完结
Tutorial #4 Smart Cut™: Engineered substrate for device performance enhancement
2个月前
已关闭
Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology
2个月前
已关闭
Strain-Relaxed InGaN Buffer Layers for Long Wavelength Nitride Devices
3个月前
已完结
Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration
4个月前
已完结
Brillouin scattering study of bulk GaN
4个月前
已完结
Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range
4个月前
已完结
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