Lv3
230 积分 2024-09-27 加入
Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure
5天前
已完结
Eliminating negative-set behavior by adding a graphene blocking layer in resistive switching memory devices based on epoxy resin
5天前
已完结
Interface Engineering via MoS2Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory
5天前
已完结
SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory
5天前
已完结
Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination
5天前
已完结
Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning
5天前
已完结
Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory
5天前
已完结
Adaptive Processing Enabled by Sodium Alginate Based Complementary Memristor for Neuromorphic Sensory System
20天前
已完结
Structural and electrical properties of SiNx:H films
24天前
已完结
Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method
24天前
已完结
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