Lv41
625 积分 2020-12-07 加入
Investigation into the impact of bulk defects in drift layer on the electrical properties for GaN-based trench Schottky barrier diodes
3小时前
已关闭
Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering
3小时前
已完结
Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM
12天前
已完结
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 V
16天前
已完结
Temperature and total ionizing dose effects of SiC MOSFET and their synergistic characteristics
8个月前
已完结
A self-biased GaN LNA with 30 dB gain and 21 dBm P1dB for 5G communications
10个月前
已完结
A self-biased GaN LNA with 30 dB gain and 21 dBm P1dB for 5G communications
11个月前
已完结
Normally-on/off AlN/GaN high electron mobility transistors
1年前
已完结
Radiological health risks for exploratory class missions in space
1年前
已完结
Space product assurance. Radiation hardness assurance. EEE components
1年前
已完结
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