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50 积分 2024-01-10 加入
InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers
16天前
已完结
Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
1个月前
已完结
Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer
1个月前
已完结
Stacked GaN/AlN last quantum barrier for high-efficiency InGaN-based green light-emitting diodes
1个月前
已完结
Growth and characterization of micro-LED based on GaN substrate
3个月前
已关闭
Study of Stress Compensation Layer for Enhancing Quantum Efficiency of InGaN/GaN-MQWs LEDs Within the Green-Gap Region
3个月前
已完结
Comparison of Electro-Optical Characteristics of Simulated and Fabricated InGaN/ GaN MQWs Green Light Emitting Diodes on c-Plane Sapphire
3个月前
已完结
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth
3个月前
已完结
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
3个月前
已完结
Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation
3个月前
已完结
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