Lv11
66 积分 2024-05-23 加入
In x Ga 1−x As/Al y Ga 1−y As/Al z Ga 1−z As asymmetric step quantum-well middle wavelength infrared detectors
6小时前
已完结
Wavelength tuning of VCSELs via controlled strain
4天前
已完结
Effects of different current confinement layers in GaN-based VCSELs
8天前
已完结
Thermal properties of GaN-based semiconductor-metal subwavelength grating VCSELs and novel current injection scheme
9天前
已完结
Structure Design of UVA VCSEL for High Wall Plug Efficiency and Low Threshold Current
11天前
已完结
Reduction in the Efficiency-Droop Effect of InGaN Green Light-Emitting Diodes Using Gradual Quantum Wells
16天前
已完结
On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes
17天前
已完结
Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance
18天前
已关闭
Time-domain Green's functions of realistic VCSEL cavities
18天前
已完结
On the origin for the hole confinement into apertures for GaN-based VCSELs with buried dielectric insulators
23天前
已完结
皖公网安备34019202002308
