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160 积分 2023-12-13 加入
N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al<inf>2</inf>O<inf>3</inf> based etch stop technology for the gate recess
16天前
已完结
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
16天前
已完结
N-polar GaN∕AlGaN∕GaN high electron mobility transistors
16天前
已完结
Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer
2个月前
已完结
High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
2个月前
已完结
Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN
8个月前
已完结
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