Lv4
455 积分 2021-08-29 加入
Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices
6个月前
已完结
Flexible boron nitride-based memristor forin situdigital and analogue neuromorphic computing applications
6个月前
已完结
Embodiment of Intelligence and Computing for Robots and Robot Vision Applications
7个月前
已完结
Stable and Repeatable Zro2 Rram Achieved by Nio Barrier Layer for Negative Set Phenomenon Elimination
7个月前
已完结
Three typical types of alternating I–V curves in ITO/BiFeO3/Al2O3/Ag multilayer structure
7个月前
已完结
Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT
7个月前
已完结
Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors
7个月前
已关闭
Features of the Formation of Ni–GaAs Contacts Obtained by Electrolysis and Their Electrophysical Properties
7个月前
已完结
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence
7个月前
已完结
“Cold” Tunneling Ohmic Contact With p-GaAs Nanolayer 10 nm Thick
7个月前
已完结
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