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130 积分 2024-09-01 加入
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors
1天前
已完结
AlGaN/GaN double-channel HEMT
1个月前
已完结
Characteristics Improvement of AlGaN/GaN MOS-HEMT by Thickness and Doping Concentration Variation of GaN Doped Layer
1个月前
已完结
A study on the high power microwave effects of PIN diode limiter based on deep learning algorithm
4个月前
已完结
Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages
4个月前
已完结
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