Lv3
232 积分 2024-03-03 加入
HyFET—A GaN/SiC Hybrid Field-Effect Transistor
5天前
已完结
Monolithic Integration Process of Driving Switch for GaN Micro LED
22天前
已关闭
Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE
24天前
已完结
Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers
24天前
已完结
Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1)
25天前
已完结
Optimized piranha etching process for SU8-based MEMS and MOEMS construction
28天前
已完结
Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures
30天前
已关闭
Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering
1个月前
已完结
Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
1个月前
已完结
Performance enhancement of nitrogen-polar GaN-based light-emitting diodes prepared by metalorganic chemical vapor deposition
1个月前
已完结
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