Lv11
86 积分 2023-11-16 加入
Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals
2小时前
已完结
Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology
1个月前
已完结
Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method
1个月前
已完结
Scratching properties of 4H–SiC single crystal after oxidation under different conditions
1个月前
已完结
Comparing basal and prismatic slips induced by thermal stresses in 4H-SiC crystal
1个月前
已完结
Structure and reduction of large bumps formed on 4H-SiC epitaxial film originated from dislocations in substrate
1个月前
已完结
Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process
1个月前
已完结
Structure and reduction of large bumps formed on 4H-SiC epitaxial film originated from dislocations in substrate
1个月前
已完结
Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules
1个月前
已完结
Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H-SiC epitaxial layers
2个月前
已完结
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