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李扬
Lv2
126 积分
2023-11-16 加入
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Structure and reduction of large bumps formed on 4H-SiC epitaxial film originated from dislocations in substrate
10天前
已完结
Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules
11天前
已完结
Structural and electronic characterization of (2,33) bar-shaped stacking fault in 4H-SiC epitaxial layers
17天前
已完结
Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers
1个月前
已完结
Characterisation of negative-Udefects in semiconductors
1个月前
已完结
Point Defects in Silicon Carbide
2个月前
已完结
Fast growth of n-type 4H-SiC bulk crystal by gas-source method
2个月前
已完结
Thermal stress simulation of optimized SiC single crystal growth crucible structure
2个月前
已完结
Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment
4个月前
已完结
Model for elimination of lifetime-limiting carbon vacancy defects in SiC by thermal treatment
4个月前
已完结
没有进行任何应助
谢谢
11个月前
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