Dielectric Properties and Carrier Transport Mechanism in Annealed HfOx‐Based Resistive Random Access Memory Devices

The diversity of the carrier transport mechanism in the resistive switching process remains a significant obstacle for the design and application of resistive random access memory (RRAM) devices. In this study, the influence of annealing on the dielectric properties of the Ti/HfO x /Pt RRAM device and its associated carrier transport mechanism is investigated. The results reveal that the current conduction in both annealed and unannealed devices is primarily attributed to grain boundary (GB) relaxation, with only the GB acting as a depletion layer that induces dielectric relaxation. Furthermore, annealing decreases the interfacial polarization and changes the relaxation time at the GB. In addition, the charge carriers exhibit nearest‐neighbor hopping conduction at a higher temperature in Ti/HfO x /Pt RRAM devices, whereas variable‐range‐hopping conduction occurs at lower temperatures. Long‐range charge carrier transport also plays a significant role in the conduction process. To offer a deeper understanding of the conduction processes in the Ti/HfO x /Pt RRAM device, a carrier transport model is proposed, which provides valuable insights into the intricate mechanisms governing conduction in these devices.